ABB 5SHY35L4510 Asymmetric Integrated Gate-Commutated Thyristor (IGCT)

General Information

• Product ID: 5SHY35L4510

• Type: Asymmetric Integrated Gate-Commutated Thyristor (IGCT)

• Voltage Rating: 4500 V

• Maximum Average On-State Current: 1700 A (half sine, Tj = 85 °C)

• Maximum RMS On-State Current: ~2670 A

• Peak Non-Repetitive Surge Current: up to 32 kA (short pulses)

• On-State Voltage: ≤ 2.7 V at 4000 A, Tj = 125 °C

• Slope Resistance: ~0.325 mΩ

• Turn-On Delay: ≤ 3–3.5 µs

• Rise Time: ≤ 1 µs

• Maximum Controllable Turn-Off Current: ~4000 A

• Turn-Off Delay: ≤ 7 µs

• Turn-Off Energy: ~19.5–22 J at 4000 A, Vd = 2800 V

• Junction Temperature Range: –40 to +125 °C

• Thermal Resistance Junction-to-Case: ≤ 8.5 K/kW

• Mechanical Mounting Force: min 36 kN, max 44 kN

• Physical Dimensions: Length 439 mm, Height 41 mm, Width 172.5 mm

• Weight: 2.90 kg

Additional Information

• Module Type: Power Semiconductor / IGCT Module

• Blocking & Snubber Behavior: optimized for snubberless turn-off operation in medium frequency environments

• Reliability & Immunity: high EMI immunity, robust industrial design, simple control interface with status feedback

• Cooling & Mounting: double-side cooled module, requires proper mounting force for thermal contact

• Application Domains: industrial converters, high-power drives, traction systems, energy management

• Gate Unit & Control: supports AC gate supply, status feedback via optical interface, diagnostic indicators, fault monitoring logic

• Design Variant: Type 10 in the 4.5 kV IGCT family, balancing on-state losses and switching performance

• Product Type: Control System Accessory

• Typical Use: high-power industrial converters, motor drives, regenerative systems