ABB 5SHX19L6010 Reverse Conducting Integrated Gate-Commutated Thyristor (RC-IGCT)

General Information

• Product ID: 5SHX19L6010

• Type: Reverse Conducting Integrated Gate-Commutated Thyristor (RC-IGCT)

• Voltage Rating: 4500 V

• Current Rating:

• Average On-State Current (Iₜₐᵥ): 840 A (half sine, Tc = 85 °C)

• RMS On-State Current (Iₜᵣₘₛ): 1320 A

• Peak Non-Repetitive Surge Current (Iₜₛₘ): 10.5 kA (tp = 3 ms, Tvj = 125 °C)

• Package Type: Flat panel SCR module

• Application: Suitable for high-power industrial systems such as converters, inverters, motor drives, and regenerative DC drives

Additional Information

On-State Characteristics

• On-State Voltage (Vₜ):

• At Iₜ = 1800 A, Tvj = 125 °C: 2.75–3.45 V

• Threshold Voltage (Vₜ₀): 1.9 V (for Iₜ = 500–1800 A, Tvj = 125 °C)

• Slope Resistance (rₜ): 0.9 mΩ

Switching Characteristics

• Turn-On Delay Time (tₖₒₙ): 3.5 µs (at VD = 3300 V, Iₜ = 1800 A, Tvj = 125 °C)

• Rise Time (tᵣ): 1 µs

• Turn-On Energy per Pulse (Eₒₙ): 1 J

• Controllable Turn-Off Current (IₜGQM):

• At VD = 3300 V: 1800 A

• At VD = 3900 V: 900 A

• Turn-Off Delay Time (tᵈₒᶠᶠ): 7 µs (at VD = 3300 V, Tvj = 125 °C)

• Turn-Off Energy per Pulse (Eₒᶠᶠ): 9–11 J

Diode Characteristics

• Average On-State Current (Iₓₐᵥ): 340 A (half sine, Tc = 85 °C)

• RMS On-State Current (Iₓᵣₘₛ): 530 A

• Peak Non-Repetitive Surge Current (Iₓₛₘ): 7.7 kA (tp = 10 ms, Tvj = 125 °C)

• On-State Voltage (Vₓₐᵥ): 5.8–6.4 V (at Iₓ = 1800 A, Tvj = 125 °C)

• Reverse Recovery Characteristics:

• Reverse Recovery Current (Iₓᵣₘ): 780 A

• Reverse Recovery Charge (Qrr): 2800 µC

• Turn-Off Energy (Erec): 3.0–4.5 J

Mechanical & Thermal Data

• Length: 439 mm

• Height: 41 mm

• Width: 173 mm

• Weight: 2.9 kg

• Creepage Distance (Anode to Gate): ≥ 33 mm

• Air Strike Distance (Anode to Gate): ≥ 10 mm

• Mounting Force: 42–46 kN

• Housing Thickness (at Fm = 44 kN): 25.8–26.3 mm

Gate Unit Data

• Gate Unit Voltage (VGin): 28–40 V (AC square wave amplitude or DC voltage)

• Minimum Gate Unit Current (IGin_min): 2 A

• Maximum Gate Unit Current (IGin_max): 8 A (rectified average current)

• Gate Unit Power Consumption (PGin_max): 130 W

• Optical Control Input/Output:

• Command Signal (CS) On-Time: 40 µs

• Command Signal Off-Time: 40 µs

• Status Feedback (SF) On-Time: 40 µs

• Status Feedback Off-Time: 40 µs

• Optical Input Power (Pon_CS): –15 to –1 dBm

• Optical Output Power (Pon_SF): –19 to –1 dBm